Growth in Silicon Carbide Technology with Dr. John W. Palmour, June 17

Date: June 17, 2019

Time: 11:30 am

Silicon Carbide (SiC) is a wide bandgap semiconductor that allows transistors for power management applications to be far more efficient than the silicon based switches that have been used for many years. While SiC has been adopted in a number of industrial power management applications, the efficiency improvements it offers is now enabling more efficient electric vehicles that can drive further in range, and charge faster. This is leading to explosive growth for this new semiconductor. SiC has classically been a very difficult material to grow in single crystal form, but Cree has been leading this technology for more than 30 years. This talk will cover the challenges in growing the crystals, the fundamental reasons why it is much better than silicon, and how the SiC power devices are being used in next generation electric vehicles to reduce cost and extend range.

Dr. John W. Palmour is the Chief Technology Officer for Wolfspeed, a Cree company. He directs and conducts the Power Device, Microwave device, and materials development for Wolfspeed. He was one of the co-founders of Cree in 1987, and served on the Board of Directors for the company from 1995 to 2010. Dr. Palmour has been a leader in SiC and GaN device development for the last 30 years, and has demonstrated numerous firsts in these technology areas. During his career, he has authored or co-authored more than 380 publications and is a co-inventor on 75 U.S. patents. Dr. Palmour received his B.S. and Ph.D. degrees from North Carolina State University, Raleigh, in 1982 and 1988, respectively, where his major was in Materials Science and Engineering. Dr. Palmour became a Fellow of the IEEE in 2013.


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Raleigh, NC 27601



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